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《异质结双极晶体管电路设计(英文版)》可作为光电子专业、微波专业和电路与系统专业的高年级本科生和研究生教学参考书，也可以供从事集成电路设计的科研人员参考使用。
作者简介
作者:Jianjun Gao(高建军)
目录
About the Author
Preface
Acknowledgments
Nomenclature
1 Introduction
1.1 Overview of Heterojunction Bipolar Transistors
1.2 Modeling and Measurement for HBT
1.3 Organization of This Book
References
2 Basic Concept of Microwave Device Modeling
2.1 Signal Parameters
2.1.1 Low-Frequency Parameters
2.1.2 S-Parameters
2.2 Representation of Noisy Two-Port Network
2.2.1 Noise Matrix
2.2.2 Noise Parameters
2.3 Basic Circuit Elements
2.3.1 Resistance
2.3.2 Capacitance
2.3.3 Inductance
2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line
2.4 π- and T-Type Networks
2.4.1 T-Type Network
2.4.2 π-Type Network
2.4.3 Relationship between π- and T-Type Networks
2.5 Deembedding Method
2.5.1 Parallel Deembedding
2.5.2 Series Deembedding
2.5.3 Cascading Deembedding
2.6 Basic Methods of Parameter Extraction
2.6.1 Determination of Capacitance
2.6.2 Determination of Inductance
2.6.3 Determination of Resistance
2.7 Summary
References
3 Modeling and Parameter Extraction Methods of Bipolar
Junction Transistor
3.1 PN Junction
3.2 PN Junction Diode
3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model
3.2.3 Determination of Model Parameters
3.3 BJT Physical Operation
3.3.1 Device Structure
3.3.2 The Modes of Operation
3.3.3 Base-Width Modulation
3.3.4 High Injection and Current Crowding
3.4 Equivalent Circuit Model
3.4.1 E-M Model
3.4.2 G-P Model
3.4.3 Noise Model
3.5 Microwave Performance
3.5.1 Transition Frequency
3.5.2 Common-Emitter Configuration
3.5.3 Common-Base Configuration
3.5.4 Common-Collector Configuration
3.5.5 Summary and Comparisons
3.6 Summary
References
4 Basic Principle of HBT
4.1 Semiconductor Heterojunction
4.2 HBT Device
4.2.1 GaAs HBT
4.2.2 lnP HBT
4.3 Summary
References
5 Small-Signal Modeling and Parameter Extraction of HBT
5.1 Small-Signal Circuit Model
5.1.1 Pad Structure
5.1.2 T-Type Circuit Model
5.1.3 π-Type Circuit Model
5.1.4 Unilateral Power Gain
5.1.5 fr and fmax
5.2 HBT Device Structure
5.3 Extraction Method of PAD Capacitances
5.3.1 Open Test Structure Method
5.3.2 Pinch-Off Method
5.4 Extraction Method of Extrinsic Inductances
5.4.1 Short Test Structure Method
5.4.2 Open-Collector Method
5.5 Extraction Method of Extrinsic Resistance
5.5.1 Z Parameter Method
5.5.2 Cold-HBT Method
5.5.3 Open-Collector Method
5.6 Extraction Method of Intrinsic Resistance
5.6.1 Direct Extraction Method
5.6.2 Hybrid Method
5.7 Semianalysis Method
5.8 Summary
References
6 Large-Signal Equivalent Circuit Modeling of HRT
6.1 Linear and Nonlinear
6.1.1 Definition
6.1.2 Nonlinear Lumped Elements
6.2 Large Signal and Small Signal
6.3 Thermal Resistance
6.3.1 Definition
6.3.2 Equivalent Circuit Model
6.3.3 Determination of Thermal Resistance
6.4 Nonlinear HBT Modeling
6.4.1 VBIC Model
6.4.2 Agilent Model
6.4.3 Macromodeling Method
6.5 Summary
References
Microwave Noise Modeling and Parameter Extraction
Technique for HBTs
7.1 Noise Equivalent Circuit Model
7.2 Derivation of Noise Parameters
7.3 Noise Parameter Extraction Methods
7.3.1 Tuner-Based Extraction Method
7.3.2 Noise Parameters Based on Noise Figure Measurement
7.4 Common Base, Emitter, and Collector Configurations
7.4.1 Signal Parameter Relationships
7.4.2 Noise Parameter Relationships
7.5 Summary
References
SiGe HBT Modeling and Parameter Extraction
8.1 Introduction
8.2 Small-Signal Model
8.3 Large-Signal Model
8.3.1 HICUM
8.3.2 MEXTRAM Equivalent Circuit Model
8.4 Summary
References
Index
文摘
版权页：
3.1PN Junction
A major change in the electrical properties of a semiconductor can be initialed byintroducing impurity atoms； this process is called doping. For n-type doping, thedonor impurity atoms add electrons to the conduction band without creating holesin the valence band. For p-type doping, the acceptor atom can generate holes in thevalence band without creating electrons in the conduction band. The operation of asemiconductor device is naturally dependent on the physical behavior of thesemiconductors themselves, The pn junction continues to be a basic building blockin semiconductor devices, and the theory of the pn junction is still fundamental inthe physics of semiconductor devices. The physical contact of a p-type with ann-type semiconductor leads to one of the most important concepts when dealingwith active semiconductor devices: the pn junction. It is fabricated within a singlesilicon crystal by creating regions of different dopings: one region is doped withacceptor impurity atoms to form the p region and the adjacent region is doped withdonor atoms to form the n region.
Figure 3. I shows the pn junction with charge distribution in the absence ofexternally applied voltage. Where q is the electron charge, NA and ND are the dopingconcentrations of the p side and n side, respectively, It is noted that NA is higher thanND in Figure 3.1, a typical situation in practice. Because the concentration of theholes is high in the p region and low in the n region, holes diffuse across the junctionfrom the p side to the n side, and the negatively space charged acceptor atoms areleft behind； similarly, electrons diffuse across the junction from the n side to the pside, and the positively charged donor atoms are left behind. The net positively andnegatively charged regions are shown in Figure 3.1 and these two regions arereferred to as space charge region, also called depletion region (depleted of anymobile charge). An electric field is created between the net positive charge inthe n side and negative charge in the p side and the diffusion of holes into then region and electrons into the p region is opposed. In fact, the voltage drop acrossthe depletion region caused by internal electric field acts as a barrier that has to beovercome by diffusion hole and electron currents. The potential barrier is referredto as the built-in potential barrier and is denoted by Vbi.
《异质结双极晶体管电路设计(英文版)》可作为光电子专业、微波专业和电路与系统专业的高年级本科生和研究生教学参考书，也可以供从事集成电路设计的科研人员参考使用。
作者简介
作者:Jianjun Gao(高建军)
目录
About the Author
Preface
Acknowledgments
Nomenclature
1 Introduction
1.1 Overview of Heterojunction Bipolar Transistors
1.2 Modeling and Measurement for HBT
1.3 Organization of This Book
References
2 Basic Concept of Microwave Device Modeling
2.1 Signal Parameters
2.1.1 Low-Frequency Parameters
2.1.2 S-Parameters
2.2 Representation of Noisy Two-Port Network
2.2.1 Noise Matrix
2.2.2 Noise Parameters
2.3 Basic Circuit Elements
2.3.1 Resistance
2.3.2 Capacitance
2.3.3 Inductance
2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line
2.4 π- and T-Type Networks
2.4.1 T-Type Network
2.4.2 π-Type Network
2.4.3 Relationship between π- and T-Type Networks
2.5 Deembedding Method
2.5.1 Parallel Deembedding
2.5.2 Series Deembedding
2.5.3 Cascading Deembedding
2.6 Basic Methods of Parameter Extraction
2.6.1 Determination of Capacitance
2.6.2 Determination of Inductance
2.6.3 Determination of Resistance
2.7 Summary
References
3 Modeling and Parameter Extraction Methods of Bipolar
Junction Transistor
3.1 PN Junction
3.2 PN Junction Diode
3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model
3.2.3 Determination of Model Parameters
3.3 BJT Physical Operation
3.3.1 Device Structure
3.3.2 The Modes of Operation
3.3.3 Base-Width Modulation
3.3.4 High Injection and Current Crowding
3.4 Equivalent Circuit Model
3.4.1 E-M Model
3.4.2 G-P Model
3.4.3 Noise Model
3.5 Microwave Performance
3.5.1 Transition Frequency
3.5.2 Common-Emitter Configuration
3.5.3 Common-Base Configuration
3.5.4 Common-Collector Configuration
3.5.5 Summary and Comparisons
3.6 Summary
References
4 Basic Principle of HBT
4.1 Semiconductor Heterojunction
4.2 HBT Device
4.2.1 GaAs HBT
4.2.2 lnP HBT
4.3 Summary
References
5 Small-Signal Modeling and Parameter Extraction of HBT
5.1 Small-Signal Circuit Model
5.1.1 Pad Structure
5.1.2 T-Type Circuit Model
5.1.3 π-Type Circuit Model
5.1.4 Unilateral Power Gain
5.1.5 fr and fmax
5.2 HBT Device Structure
5.3 Extraction Method of PAD Capacitances
5.3.1 Open Test Structure Method
5.3.2 Pinch-Off Method
5.4 Extraction Method of Extrinsic Inductances
5.4.1 Short Test Structure Method
5.4.2 Open-Collector Method
5.5 Extraction Method of Extrinsic Resistance
5.5.1 Z Parameter Method
5.5.2 Cold-HBT Method
5.5.3 Open-Collector Method
5.6 Extraction Method of Intrinsic Resistance
5.6.1 Direct Extraction Method
5.6.2 Hybrid Method
5.7 Semianalysis Method
5.8 Summary
References
6 Large-Signal Equivalent Circuit Modeling of HRT
6.1 Linear and Nonlinear
6.1.1 Definition
6.1.2 Nonlinear Lumped Elements
6.2 Large Signal and Small Signal
6.3 Thermal Resistance
6.3.1 Definition
6.3.2 Equivalent Circuit Model
6.3.3 Determination of Thermal Resistance
6.4 Nonlinear HBT Modeling
6.4.1 VBIC Model
6.4.2 Agilent Model
6.4.3 Macromodeling Method
6.5 Summary
References
Microwave Noise Modeling and Parameter Extraction
Technique for HBTs
7.1 Noise Equivalent Circuit Model
7.2 Derivation of Noise Parameters
7.3 Noise Parameter Extraction Methods
7.3.1 Tuner-Based Extraction Method
7.3.2 Noise Parameters Based on Noise Figure Measurement
7.4 Common Base, Emitter, and Collector Configurations
7.4.1 Signal Parameter Relationships
7.4.2 Noise Parameter Relationships
7.5 Summary
References
SiGe HBT Modeling and Parameter Extraction
8.1 Introduction
8.2 Small-Signal Model
8.3 Large-Signal Model
8.3.1 HICUM
8.3.2 MEXTRAM Equivalent Circuit Model
8.4 Summary
References
Index
文摘
版权页：
3.1PN Junction
A major change in the electrical properties of a semiconductor can be initialed byintroducing impurity atoms； this process is called doping. For n-type doping, thedonor impurity atoms add electrons to the conduction band without creating holesin the valence band. For p-type doping, the acceptor atom can generate holes in thevalence band without creating electrons in the conduction band. The operation of asemiconductor device is naturally dependent on the physical behavior of thesemiconductors themselves, The pn junction continues to be a basic building blockin semiconductor devices, and the theory of the pn junction is still fundamental inthe physics of semiconductor devices. The physical contact of a p-type with ann-type semiconductor leads to one of the most important concepts when dealingwith active semiconductor devices: the pn junction. It is fabricated within a singlesilicon crystal by creating regions of different dopings: one region is doped withacceptor impurity atoms to form the p region and the adjacent region is doped withdonor atoms to form the n region.
Figure 3. I shows the pn junction with charge distribution in the absence ofexternally applied voltage. Where q is the electron charge, NA and ND are the dopingconcentrations of the p side and n side, respectively, It is noted that NA is higher thanND in Figure 3.1, a typical situation in practice. Because the concentration of theholes is high in the p region and low in the n region, holes diffuse across the junctionfrom the p side to the n side, and the negatively space charged acceptor atoms areleft behind； similarly, electrons diffuse across the junction from the n side to the pside, and the positively charged donor atoms are left behind. The net positively andnegatively charged regions are shown in Figure 3.1 and these two regions arereferred to as space charge region, also called depletion region (depleted of anymobile charge). An electric field is created between the net positive charge inthe n side and negative charge in the p side and the diffusion of holes into then region and electrons into the p region is opposed. In fact, the voltage drop acrossthe depletion region caused by internal electric field acts as a barrier that has to beovercome by diffusion hole and electron currents. The potential barrier is referredto as the built-in potential barrier and is denoted by Vbi.
| ISBN | 7040421933,9787040421934 |
|---|---|
| 出版社 | 高等教育出版社 |
| 作者 | 高建军 |
| 尺寸 | 16 |