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《基于硅技术24GHz汽车雷达的微波电路(英文版)(影印版)》是丛书之一。科学出版社引进一批国外知名出版社的优秀著作，使我国从事信息技术的广大科学工作者和工程技术人员能以较低的价格购买，对于推动我国信息技术领域的科研与教学是十分有益的事。
作者简介
作者：（德国）伊萨克诺夫（Vadim Issakov）
目录
1 Introduction
References
2 Radar Systems
2.1 Radar Principle
2.2 Radar Equation and System Considerations
2.3 CW and Frequency—Modulated Radar
2.3.1 Doppler Radar
2.3.2 Frequency—Modulated Radar
2.3.2.1 Linear FM Continuous—Wave Radar
2.4 Angle Detection
2.5 Frequency Regulations
2.6 Receiver Architectures
2.6.1 Homodyne
2.6.2 Heterodyne
2.7 Status of Automotive Radar Systems
2.8 Technology Requirements for Radar Chipset
References
3 CMOS and Bipolar Technologies
3.1 CMOS Technology
3.1.1 MOSFET Layout and Modeling Considerations
3.1.2 Devices Available in C 11N
3.2 Bipolar Transistors
3.2.1 HBT Layout and Modeling Considerations
3.2.2 Devices Available in B7HF200
3.3 Technology Comparison
3.3.1 Transistor Performance
3.3.2 Metallization and Passive Components
References
4 Modeling Techniques
4.1 Analytical Fitting of On—Chip Inductors
4.1.1 Series Branch Parameters Fitting
4.1.2 Shunt Branches Parameters Fitting
4.1.3 Results Verification
4.2 Transistor Finger Capacitance Estimation
References
5 Measurement Techniques
5.1 S—parameter De—embedding Techniques
5.1.1 Extension of Thru Technique for De—embedding of Asymmetrical Error Networks
5.1.1.1 Theory
5.1.1.2 Result Verification
5.1.2 De—embedding of Differential Devices using cascade—based Two—Port Techniques
5.1.2.1 Theory
5.1.2.2 Result Verification
5.2 Differential Measurements using Baluns
5.2.1 Theoretical Analysis
5.2.1.1 Back—to—Back Measurement
5.2.1.2 DUT Measurement
5.2.1.3 Insertion Loss De—embedding Error
5.2.2 Measurement Verification
References
6 Radar Receiver Circuits
6.1 Low—Noise Amplifiers
6.1.1 LNA in CMOS Technology
6.1.2 LNA in SiGe：C Technology
6.1.3 Measurements of CMOS and SiGe LNAs
6.1.4 LNA Results Summary and Comparison
6.2 Mixers
6.2.1 Active Mixers
6.2.1.1 Active Mixer in CMOS Technology
6.2.1.2 Active Mixer in SiGe Technology
6.2.1.3 Measurements of CMOS and SiGe Active Mixers
6.2.1.4 Active Mixers Results Summary and Comparison
6.2.2 Passive Mixers
6.2.2.1 Passive Resistive Ring Mixer in CMOS Technology
6.2.2.2 Passive Bipolar Mixer in SiGe Technology
6.2.2.3 Measurements of CMOS and SiGe Passive Mixers
6.2.2.4 Passive Mixers Results Summary and Comparison
6.2.3 Comparison of Active and Passive Mixers
6.3 Single—Channel Receivers
6.3.1 Design of Active and Passive Receivers in CMOS
6.3.2 Receiver Measurements and Analysis
6.3.2.1 Chip Size
6.3.2.2 Power Consumption， Gain and Noise Figure
6.3.2.3 Linearity
6.3.2.4 Required LO Power
6.3.2.5 Isolation
6.3.2.6 Temperature Performance
6.3.3 Receiver Results Summary and Comparison
6.4 IQ Receivers
6.4.1 Design of IQ Receivers
6.4.1.1 IQ Receiver in CMOS Technology
6.4.1.2 IQ Receiver in SiGe Technology
6.4.2 IQ Receiver Measurements
6.4.3 IQ Receiver Results Summary and Comparison
6.5 Integrated Passive Circuits
6.5.1 Circuit Design and Layout Considerations
6.5.1.1 On—Chip 180～ Power Splitter／Combiner
6.5.1.2 On—Chip 90～ Power Splitter／Combiner
6.5.1.3 On—Chip 180～ Hybrid Ring Coupler
6.5.2 Realization and Measurement Results
6.5.2.1 On—Chip 180～ Power Splitter／Combiner
6.5.2.2 On—Chip 90～ Power Splitter／Combiner
6.5.2.3 On—Chip 180～ Hybrid Ring Coupler
6.5.3 Results Summary and Discussion
6.6 Circuit—Level RF ESD Protection
6.6.1 Overview of Circuit—Level Protection Techniq.ues
6.6.2 Virtual Ground Concept
6.6.2.1 Concept Verification by Circuit Simulation
6.6.2.2 Concept Verification by HBM Measurement
6.6.2.3 Concept Verification by TLP Measurement
6.6.3 Transformer Protection Concept
6.6.3.1 Test LNA Circuit Design
6.6.3.2 Test LNA Realization and Measurement
6.6.3.3 Concept Verification by TLP Measurement
References
7 Radar Transceiver Circuits
7.1 IQ Transceiver in CMOS
7.1.1 IQ Transceiver Circuit Design
7.1.2 Measurements of Transceiver
7.1.3 Results Summary and Comparison
7.2 Merged Power—Amplifier—Mixer Transceiver
7.2.1 System Considerations
7.2.2 Power—Amplifier—Mixer Circuit Design
7.2.3 PAMIX Measurements
7.2.4 Results Summary and Comparison
References
8 Conclusions and Outlook
A LFMCW Radar
References
B FSCW Radar
References
C Surface Charge Method
C.I Surface Charge Method Theory
C.2 Meshing of the Multifinger Layout
D Measurement of Active Circuits
D.1 Measurement Techniques
D.2 LNA Characterization
D.2.1 S—parameter Measurement
D.2.2 Noise Figure Measurement
D.2.3 Linearity Measurement
D.3 Mixer and Receiver Characterization
D.3.1 Conversion Gain Measurement
D.3.2 Noise Figure Measurement
D.3.3 Linearity Measurement
References
Index
文摘
版权页：
插图：
《基于硅技术24GHz汽车雷达的微波电路(英文版)(影印版)》是丛书之一。科学出版社引进一批国外知名出版社的优秀著作，使我国从事信息技术的广大科学工作者和工程技术人员能以较低的价格购买，对于推动我国信息技术领域的科研与教学是十分有益的事。
作者简介
作者：（德国）伊萨克诺夫（Vadim Issakov）
目录
1 Introduction
References
2 Radar Systems
2.1 Radar Principle
2.2 Radar Equation and System Considerations
2.3 CW and Frequency—Modulated Radar
2.3.1 Doppler Radar
2.3.2 Frequency—Modulated Radar
2.3.2.1 Linear FM Continuous—Wave Radar
2.4 Angle Detection
2.5 Frequency Regulations
2.6 Receiver Architectures
2.6.1 Homodyne
2.6.2 Heterodyne
2.7 Status of Automotive Radar Systems
2.8 Technology Requirements for Radar Chipset
References
3 CMOS and Bipolar Technologies
3.1 CMOS Technology
3.1.1 MOSFET Layout and Modeling Considerations
3.1.2 Devices Available in C 11N
3.2 Bipolar Transistors
3.2.1 HBT Layout and Modeling Considerations
3.2.2 Devices Available in B7HF200
3.3 Technology Comparison
3.3.1 Transistor Performance
3.3.2 Metallization and Passive Components
References
4 Modeling Techniques
4.1 Analytical Fitting of On—Chip Inductors
4.1.1 Series Branch Parameters Fitting
4.1.2 Shunt Branches Parameters Fitting
4.1.3 Results Verification
4.2 Transistor Finger Capacitance Estimation
References
5 Measurement Techniques
5.1 S—parameter De—embedding Techniques
5.1.1 Extension of Thru Technique for De—embedding of Asymmetrical Error Networks
5.1.1.1 Theory
5.1.1.2 Result Verification
5.1.2 De—embedding of Differential Devices using cascade—based Two—Port Techniques
5.1.2.1 Theory
5.1.2.2 Result Verification
5.2 Differential Measurements using Baluns
5.2.1 Theoretical Analysis
5.2.1.1 Back—to—Back Measurement
5.2.1.2 DUT Measurement
5.2.1.3 Insertion Loss De—embedding Error
5.2.2 Measurement Verification
References
6 Radar Receiver Circuits
6.1 Low—Noise Amplifiers
6.1.1 LNA in CMOS Technology
6.1.2 LNA in SiGe：C Technology
6.1.3 Measurements of CMOS and SiGe LNAs
6.1.4 LNA Results Summary and Comparison
6.2 Mixers
6.2.1 Active Mixers
6.2.1.1 Active Mixer in CMOS Technology
6.2.1.2 Active Mixer in SiGe Technology
6.2.1.3 Measurements of CMOS and SiGe Active Mixers
6.2.1.4 Active Mixers Results Summary and Comparison
6.2.2 Passive Mixers
6.2.2.1 Passive Resistive Ring Mixer in CMOS Technology
6.2.2.2 Passive Bipolar Mixer in SiGe Technology
6.2.2.3 Measurements of CMOS and SiGe Passive Mixers
6.2.2.4 Passive Mixers Results Summary and Comparison
6.2.3 Comparison of Active and Passive Mixers
6.3 Single—Channel Receivers
6.3.1 Design of Active and Passive Receivers in CMOS
6.3.2 Receiver Measurements and Analysis
6.3.2.1 Chip Size
6.3.2.2 Power Consumption， Gain and Noise Figure
6.3.2.3 Linearity
6.3.2.4 Required LO Power
6.3.2.5 Isolation
6.3.2.6 Temperature Performance
6.3.3 Receiver Results Summary and Comparison
6.4 IQ Receivers
6.4.1 Design of IQ Receivers
6.4.1.1 IQ Receiver in CMOS Technology
6.4.1.2 IQ Receiver in SiGe Technology
6.4.2 IQ Receiver Measurements
6.4.3 IQ Receiver Results Summary and Comparison
6.5 Integrated Passive Circuits
6.5.1 Circuit Design and Layout Considerations
6.5.1.1 On—Chip 180～ Power Splitter／Combiner
6.5.1.2 On—Chip 90～ Power Splitter／Combiner
6.5.1.3 On—Chip 180～ Hybrid Ring Coupler
6.5.2 Realization and Measurement Results
6.5.2.1 On—Chip 180～ Power Splitter／Combiner
6.5.2.2 On—Chip 90～ Power Splitter／Combiner
6.5.2.3 On—Chip 180～ Hybrid Ring Coupler
6.5.3 Results Summary and Discussion
6.6 Circuit—Level RF ESD Protection
6.6.1 Overview of Circuit—Level Protection Techniq.ues
6.6.2 Virtual Ground Concept
6.6.2.1 Concept Verification by Circuit Simulation
6.6.2.2 Concept Verification by HBM Measurement
6.6.2.3 Concept Verification by TLP Measurement
6.6.3 Transformer Protection Concept
6.6.3.1 Test LNA Circuit Design
6.6.3.2 Test LNA Realization and Measurement
6.6.3.3 Concept Verification by TLP Measurement
References
7 Radar Transceiver Circuits
7.1 IQ Transceiver in CMOS
7.1.1 IQ Transceiver Circuit Design
7.1.2 Measurements of Transceiver
7.1.3 Results Summary and Comparison
7.2 Merged Power—Amplifier—Mixer Transceiver
7.2.1 System Considerations
7.2.2 Power—Amplifier—Mixer Circuit Design
7.2.3 PAMIX Measurements
7.2.4 Results Summary and Comparison
References
8 Conclusions and Outlook
A LFMCW Radar
References
B FSCW Radar
References
C Surface Charge Method
C.I Surface Charge Method Theory
C.2 Meshing of the Multifinger Layout
D Measurement of Active Circuits
D.1 Measurement Techniques
D.2 LNA Characterization
D.2.1 S—parameter Measurement
D.2.2 Noise Figure Measurement
D.2.3 Linearity Measurement
D.3 Mixer and Receiver Characterization
D.3.1 Conversion Gain Measurement
D.3.2 Noise Figure Measurement
D.3.3 Linearity Measurement
References
Index
文摘
版权页：
插图：
| ISBN | 9787030344779 |
|---|---|
| 出版社 | 科学出版社 |
| 作者 | 伊萨克诺夫 (Vadim Issakov) |
| 尺寸 | 16 |